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TC428EOA Datasheet(PDF) 3 Page - Microchip Technology

No. de pieza TC428EOA
Descripción Electrónicos  1.5A Dual High-Speed Power MOSFET Drivers
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC428EOA Datasheet(HTML) 3 Page - Microchip Technology

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 2002-2012 Microchip Technology Inc.
DS21415D-page 3
TC426/TC427/TC428
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage ..................................................... +20V
Input Voltage, Any Terminal
................................... VDD + 0.3V to GND – 0.3V
Power Dissipation (TA 70°C)
PDIP........................................................ 730 mW
CERDIP .................................................. 800 mW
SOIC ....................................................... 470 mW
Derating Factor
PDIP....................................................... 8 mW/°C
CERDIP .............................................. 6.4 mW/°C
SOIC ...................................................... 4 mW/°C
Operating Temperature Range
C Version ........................................ 0°C to +70°C
I Version ....................................... -25°C to +85°C
E Version...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range .............. -65°C to +150°C
*Stresses
above
those
listed
under
“Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C with 4.5V VDD18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
VIH
Logic 1, High Input Voltage
2.4
V
VIL
Logic 0, Low Input Voltage
0.8
V
IIN
Input Current
-1
1
A0VV
INVDD
Output
VOH
High Output Voltage
VDD – 0.025
V
VOL
Low Output Voltage
0.025
V
ROH
High Output Resistance
10
15
IOUT = 10 mA, VDD = 18V
ROL
Low Output Resistance
6
10
IOUT = 10 mA, VDD = 18V
IPK
Peak Output Current
1.5
A
Switching Time (Note 1)
tR
Rise Time
30
nsec
Figure 3-1, Figure 3-2
tF
Fall Time
30
nsec
Figure 3-1, Figure 3-2
tD1
Delay Time
50
nsec
Figure 3-1, Figure 3-2
tD2
Delay Time
75
nsec
Figure 3-1, Figure 3-2
Power Supply
IS
Power Supply Current
8
0.4
mA
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
Note
1:
Switching times ensured by design.


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