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AD1582ART-REEL7 Datasheet(PDF) 10 Page - Analog Devices |
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AD1582ART-REEL7 Datasheet(HTML) 10 Page - Analog Devices |
10 / 16 page AD1582/AD1583/AD1584/AD1585 Data Sheet Rev. J | Page 10 of 16 THEORY OF OPERATION The AD1582/AD1583/AD1584/AD1585 use the band gap concept to produce stable, low temperature coefficient voltage references suitable for high accuracy data acquisition compo- nents and systems. These parts of precision references use the underlying temperature characteristics of a silicon transistor’s base emitter voltage in the forward-biased operating region. Under this condition, all such transistors have a −2 mV/°C temperature coefficient (TC) and a VBE that, when extrapolated to absolute zero, 0 K (with collector current proportional to absolute temperature), approximates the silicon band gap voltage. By summing a voltage that has an equal and opposite tempera- ture coefficient of 2 mV/°C with the VBE of a forward-biased transistor, an almost 0 TC reference can be developed. In the AD1582/AD1583/AD1584/AD1585 simplified circuit diagram shown in Figure 9, such a compensating voltage, V1, is derived by driving two transistors at different current densities and amplifying the resultant VBE difference (∆VBE, which has a positive TC). The sum of VBE and V1 (VBG) is then buffered and amplified to produce stable reference voltage outputs of 2.5 V, 3 V, 4.096 V, and 5 V. R4 R6 R5 GND V1 + – R3 + R2 – R1 VIN VOUT VBG VBE Figure 9. Simplified Schematic |
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