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FDZ2551N Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FDZ2551N
Descripción Electrónicos  Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ2551N Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDZ2551N Rev A(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
20
V
∆BVDSS
===∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA,Referenced to 25°C
14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage Current,
Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage Current,
Reverse
VGS = –12 V
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
0.4
0.9
1.5
V
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 9 A
VGS = 2.5 V,
ID = 7 A
0.018
0.030
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.5
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.5 A
(Note 2)
0.77
1.2
V
Notes:
1. RθJA is a function of the junction-to-case (RθJC), case-to-ambient (RθCA ) and the PC Board (RθBA ) thermal resistance. For the purpose of determining RθJC
the case thermal reference is defined as the top surface of the package. RθJC is guaranteed by design while RθCA and RθBA are determined by the user's
design. Maximum current ratings assume single device operation.
(a). RθJA = 50°C/W (steady-state) when mounted on 1 in
2 of 2 oz. copper.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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