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2SC4226 Datasheet(PDF) 3 Page - Renesas Technology Corp

No. de pieza 2SC4226
Descripción Electrónicos  NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4226 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SC4226
R09DS0022EJ0200 Rev.2.00
Page 3 of 6
Jun 29, 2011
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
10
5
15
20
05
10
40 A
μ
60 A
μ
80 A
μ
100
A
μ
120
A
μ
140
A
μ
160
A
μ
IB = 20 A
μ
VCE = 3 V
200
50
100
10
20
15
10
0.5
50
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
VCE = 3 V
f = 1 GHz
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
20
2
5
10
1
510
0.5
1
50
250
200
150
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
5
0.2
0.5
1
2
0.1
2
1
5
10
20
50
f = 1 MHz
VCE = 3 V
20
10
0
0.5
1
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.


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