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SI5855DC-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI5855DC-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 www.vishay.com 3 Vishay Siliconix Si5855DC MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 5 V thru 3 V VDS - Drain-to-Source Voltage (V) 1.5 V 2 V 2.5 V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2468 10 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V VGS = 1.8 V 0 1 2 3 4 5 0 123 456 VDS = 10 V ID = 2.7 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0 200 400 600 800 04 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 2.7 A TJ - Junction Temperature (°C) |
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