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IRLML6302 Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRLML6302
Descripción Electrónicos  HEXFET Power MOSFET
Download  8 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRLML6302 Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
VDSS = -20V
RDS(on) = 0.60Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
IRLML6302
03/09/05
Description
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
S
D
G
Micro3
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-0.78
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-0.62
A
IDM
Pulsed Drain Current 
-4.9
PD@TA = 25°C
Power Dissipation
540
mW
Linear Derating Factor
4.3
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
230
Thermal Resistance
°C/W
PD - 91259F


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