©2000 Fairchild Semiconductor International

September 2000

Rev. A, September 2000

QFET

QFET

QFET

FQA160N08

80V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, high

efficiency switching for DC/DC converters, and DC motor

control.

Features

• Low gate charge ( typical 220 nC)

• Low Crss ( typical 530 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175

°C maximum junction temperature rating

Thermal Characteristics

Symbol

Parameter

FQA160N08

Units

Drain-Source Voltage

80

V

Drain Current

160

A

113

A

Drain Current

- Pulsed

(Note 1)

640

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

1600

mJ

Avalanche Current

(Note 1)

160

A

Repetitive Avalanche Energy

(Note 1)

37.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.5

V/ns

375

W

- Derate above 25°C

2.5

W/°C

Operating and Storage Temperature Range

-55 to +175

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

0.4

°C/W

Thermal Resistance, Case-to-Sink

0.24

--

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W

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FQA Series

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