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FM28V020-T28G Datasheet(PDF) 1 Page - Cypress Semiconductor

No. de pieza FM28V020-T28G
Descripción Electrónicos  256Kbit Bytewide F-RAM Memory
Download  16 Pages
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Fabricante Electrónico  CYPRESS [Cypress Semiconductor]
Página de inicio  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM28V020-T28G Datasheet(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron standard warranty.
The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-86204 Rev. *A
Revised March 07, 2013
FM28V020
256Kbit Bytewide F-RAM Memory
Features
256Kbit Ferroelectric Nonvolatile RAM
Organized as 32K x 8
10
14 Read/Write Cycles
NoDelay™ Writes
Page Mode Operation
Advanced High-Reliability Ferroelectric Process
Superior to Battery-backed SRAM Modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
SRAM Replacement
JEDEC 32Kx8 SRAM pinout
70 ns Access Time, 140 ns Cycle Time
Low Power Operation
2.0V – 3.6V Power Supply
Standby Current 90 A (typ)
Active Current 5 mA (typ)
Industry Standard Configurations
Industrial Temperature -40 C to +85 C
28-pin “Green”/RoHS SOIC (-SG)
28-pin “Green”/RoHS TSOP (-T28G)
32-pin “Green”/RoHS TSOP (-TG)
General Description
The FM28V020 is a 32K x 8 nonvolatile memory that
reads and writes like a standard SRAM. A ferroelectric
random access memory or F-RAM is nonvolatile,
which means that data is retained after power is
removed. It provides data retention for over 10 years
while eliminating the reliability concerns, functional
disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing
and virtually unlimited write endurance make F-RAM
superior to other types of memory.
In-system operation of the FM28V020 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by changing
the address. The F-RAM memory is nonvolatile due to
its
unique
ferroelectric
memory process.
These
features make the FM28V020 ideal for nonvolatile
memory applications requiring frequent or rapid writes
in the form of an SRAM.
The device is available in a 28-pin SOIC, 28-pin
TSOP-I, or 32-pin TSOP-I surface mount package.
Device
specifications
are
guaranteed
over
the
industrial temperature range -40°C to +85°C.
Ordering Information
FM28V020-SG
28-pin “Green”/RoHS SOIC
FM28V020-SGTR
28-pin “Green”/RoHS SOIC, Tape & Reel
FM28V020-T28G
28-pin “Green”/RoHS TSOP
FM28V020-T28GTR
28-pin “Green”/RoHS TSOP, Tape & Reel
FM28V020-TG
32-pin “Green”/RoHS TSOP
FM28V020-TGTR
32-pin “Green”/RoHS TSOP, Tape & Reel


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