Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
SI7404DN-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
|
SI7404DN-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 71658 S11-2045-Rev. G, 17-Oct-11 www.vishay.com 3 Vishay Siliconix Si7404DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 35 40 ID - Drain Current (A) VGS = 4.5 V VGS = 2.5 V VGS = 10 V 0 2 4 6 8 10 0 10203040 50 VDS = 15 V ID = 13.3 A Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 50 10 1 TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 13.3 A TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) ID = 5 A 0.00 0.01 0.02 0.03 0.04 0.05 0 2468 10 ID = 13.3 A |
Número de pieza similar - SI7404DN-T1-E3 |
|
Descripción similar - SI7404DN-T1-E3 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |