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IRF5851TRPBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF5851TRPBF
Descripción Electrónicos  Dual N and P Channel MOSFET
Download  14 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF5851TRPBF Datasheet(HTML) 1 Page - International Rectifier

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Max.
N-Channel
P-Channel
VDS
Drain-to-Source Voltage
20
-20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
2.7
-2.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
2.2
-1.7
IDM
Pulsed Drain Current

11
-9.0
PD @TA = 25°C
Power Dissipation
ƒ
0.96
W
PD @TA = 70°C
Power Dissipation
ƒ
0.62
Linear Derating Factor
7.7
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
°C
N-Ch
P-Ch
VDSS
20V
-20V
RDS(on) 0.090Ω 0.135Ω
HEXFET® Power MOSFET
04/20/10
IRF5851PbF
Description
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
–––
130
°C/W
Thermal Resistance
www.irf.com
1
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
RDS(on) reduction enables an increase in current-handling capability.
Parameter
Units
A
Absolute Maximum Ratings
-55 to + 150
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
TSOP-6



*
*
6
6



'
'
PD-95341A


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