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IRF5851TRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF5851TRPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 14 page Max. N-Channel P-Channel VDS Drain-to-Source Voltage 20 -20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.7 -2.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.2 -1.7 IDM Pulsed Drain Current 11 -9.0 PD @TA = 25°C Power Dissipation 0.96 W PD @TA = 70°C Power Dissipation 0.62 Linear Derating Factor 7.7 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range °C N-Ch P-Ch VDSS 20V -20V RDS(on) 0.090Ω 0.135Ω HEXFET® Power MOSFET 04/20/10 IRF5851PbF Description Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– 130 °C/W Thermal Resistance www.irf.com 1 These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. Parameter Units A Absolute Maximum Ratings -55 to + 150 l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free TSOP-6 * * 6 6 ' ' PD-95341A |
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