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CSD18532NQ5B Datasheet(PDF) 1 Page - Texas Instruments |
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CSD18532NQ5B Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page  0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 25A TC = 125ºC Id = 25A G001 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 Qg - Gate Charge (nC) ID = 25A VDS = 30V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 CSD18532NQ5B www.ti.com SLPS440 – JUNE 2013 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18532NQ5B 1 FEATURES PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain to Source Voltage 60 V • Avalanche Rated Qg Gate Charge Total (10V) 49 nC Qgd Gate Charge Gate to Drain 7.9 nC • Pb Free Terminal Plating VGS = 6V 3.5 m Ω • RoHS Compliant RDS(on) Drain to Source On Resistance VGS = 10V 2.7 m Ω • Halogen Free VGS(th) Threshold Voltage 2.8 V • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION APPLICATIONS Device Package Media Qty Ship • DC-DC Conversion SON 5-mm × 6-mm 13-Inch Tape and CSD18532NQ5B 2500 Plastic Package Reel Reel • Secondary Side Synchronous Rectifier • Isolated Converter Primary Side Switch ABSOLUTE MAXIMUM RATINGS • Motor Control TA = 25°C VALUE UNIT VDS Drain to Source Voltage 60 V DESCRIPTION VGS Gate to Source Voltage ±20 V The NexFET™ power MOSFET has been designed Continuous Drain Current (Package limited), 100 to minimize losses in power conversion applications. TC = 25°C ID Continuous Drain Current (Silicon limited), A 163 Top View TC = 25°C Continuous Drain Current, TA = 25°C (1) 22 IDM Pulsed Drain Current, TA = 25°C (2) 135 A PD Power Dissipation(1) 3.2 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 360 mJ ID = 85A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 40°C/W on a 1-inch 2 , 2-oz. Cu pad on a 0.06- inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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