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CSD18532NQ5B Datasheet(PDF) 2 Page - Texas Instruments |
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CSD18532NQ5B Datasheet(HTML) 2 Page - Texas Instruments |
2 / 12 page CSD18532NQ5B SLPS440 – JUNE 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA 60 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 48V 1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 2.4 2.8 3.4 V VGS = 6V, ID = 25A 3.5 4.4 m Ω RDS(on) Drain to Source On Resistance VGS = 10V, ID = 25A 2.7 3.4 m Ω gfs Transconductance VDS = 30V, ID = 25A 140 S Dynamic Characteristics Ciss Input Capacitance 4100 5340 pF Coss Output Capacitance VGS = 0V, VDS = 30V, f = 1MHz 495 644 pF Crss Reverse Transfer Capacitance 16 21 pF RG Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (10V) VDS = 30V, ID = 25A 49 64 nC Qgd Gate Charge Gate to Drain 7.9 nC Qgs Gate Charge Gate to Source 16 nC Qg(th) Gate Charge at Vth 11 nC Qoss Output Charge VDS = 30V, VGS = 0V 69 nC td(on) Turn On Delay Time 8.2 ns tr Rise Time 8.7 ns VDS = 30V, VGS = 10V, IDS = 25A, RG = 0Ω td(off) Turn Off Delay Time 20 ns tf Fall Time 2.7 ns Diode Characteristics VSD Diode Forward Voltage ISD = 25A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge 139 nC VDS= 30V, IF = 25A, di/dt = 300A/ μs trr Reverse Recovery Time 64 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case(1) 0.8 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 50 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD18532NQ5B |
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