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MRF154 Datasheet(Hoja de datos) 1 Page - Motorola, Inc

No. de Pieza. MRF154
Descripción  N-CHANNEL BROADBAND RF POWER MOSFET
Descarga  8 Pages
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Fabricante  MOTOROLA [Motorola, Inc]
Página de inicio  http://www.freescale.com
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MRF154
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz
frequency range.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
125
Vdc
Drain–Gate Voltage
VDGO
125
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
60
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1350
7.7
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.13
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF154/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF154
600 W, 50 V, 80 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 368–03, STYLE 2
(HOG PAC)
© Motorola, Inc. 1997
D
G
S
REV 2




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