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FQP5N20L Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQP5N20L Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Rev. A1, August 2001 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2001 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 4.44mH, IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.18 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25 A VGS = 5 V, ID = 2.25 A -- 0.94 0.98 1.2 1.25 Ω gFS Forward Transconductance VDS = 30 V, ID = 2.25 A -- 3.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 250 325 pF Coss Output Capacitance -- 40 50 pF Crss Reverse Transfer Capacitance -- 6 8 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 4.5 A, RG = 25 Ω -- 9 25 ns tr Turn-On Rise Time -- 90 190 ns td(off) Turn-Off Delay Time -- 15 40 ns tf Turn-Off Fall Time -- 50 110 ns Qg Total Gate Charge VDS = 160 V, ID = 4.5 A, VGS = 5 V -- 4.8 6.2 nC Qgs Gate-Source Charge -- 1.2 -- nC Qgd Gate-Drain Charge -- 2.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/µs -- 95 -- ns Qrr Reverse Recovery Charge -- 0.3 -- µC |
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