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SI5419DU-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI5419DU-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 69001 S11-0184-Rev. B, 07-Feb-11 www.vishay.com 3 Vishay Siliconix Si5419DU TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS =10 V thru 5 V VGS =3 V VGS =2 V VGS =4 V VDS - Drain-to-Source Voltage (V) 0 0.02 0.04 0.06 0.08 0.10 010 20 30 40 VGS = 4.5 V VGS = 10 V ID - Drain Current (A) 0 2 4 6 8 10 0 5 10 15 20 25 30 VDS =24 V ID =9.9 A VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 012 34 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 300 600 900 1200 1500 1800 2100 0 5 10 15 20 25 30 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 ID =6.6 A VGS =4.5 V VGS =10 V TJ -Junction Temperature (°C) |
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