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DMC2038LVT Datasheet(PDF) 6 Page - Diodes Incorporated |
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DMC2038LVT Datasheet(HTML) 6 Page - Diodes Incorporated |
6 / 10 page DMC2038LVT Document number: DS35417 Rev. 4 - 2 6 of 10 www.diodes.com September 2012 © Diodes Incorporated DMC2038LVT Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current @Tc = +25°C IDSS - - -1.0 μA VDS = -16V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.4 - -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 57 74 m Ω VGS = -4.5V, ID = -3.0A - 76 110 VGS = -2.5V, ID = -1.5A - 102 168 VGS = -1.8V, ID = -1.0A Forward Transfer Admittance |Yfs| - 10 - S VDS = -5V, ID = -3.0A Diode Forward Voltage VSD - -0.8 -1.0 V VGS = 0V, IS = -0.6A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 530 705 pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 70 95 pF Reverse Transfer Capacitance Crss - 60 90 pF Gate Resistance Rg - 72 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg - 7 10 nC VDS = -15V,ID = -6A Total Gate Charge (VGS = -10V) Qg - 14 - nC Gate-Source Charge Qgs - 0.95 - nC Gate-Drain Charge Qgd - 1.2 - nC Turn-On Delay Time tD(on) - 11 20 nS VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A, Turn-On Rise Time tr - 12 22 nS Turn-Off Delay Time tD(off) - 21 34 nS Turn-Off Fall Time tf - 13 23 nS Notes: 7. Short duration pulse test used to minimize self-heating effec 8. Guaranteed by design. Not subject to product testing. -V , DRAIN -SOURCE VOLTAGE(V) Fig. 13 Typical Output Characteristics DS 0 0.5 1 1.5 2 0 5 10 15 20 -V =10V GS -V =4.5V GS -V =4.0V GS -V =3.5V GS -V =3.0V GS -V =2.5V GS -V =2.0V GS -V =1.5V GS -V , GATE SOURCE VOLTAGE(V) Fig. 14 Typical Transfer Characteristics GS 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 |
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