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DMG5802LFX-7 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMG5802LFX-7 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 6 page DMG5802LFX Document number: DS35009 Rev. 4 - 2 4 of 6 www.diodes.com December 2012 © Diodes Incorporated DMG5802LFX 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A I = 250µA D I = 1mA D 0 0.2 0.4 0.6 0.8 1.0 1.2 Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V) SD 0 4 8 12 16 20 T = 25°C A 04 8 12 16 20 24 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V) DS 10 100 1,000 10,000 f = 1MHz C iss Crss Coss 04 8 12 16 20 24 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 1 10 100 1,000 10,000 100,000 T = 25°C A T = 85°C A T = 125°C A T = 150°C A 0 5 10 15 20 25 30 35 40 Fig. 11 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g 0 2 4 6 8 10 V = 15V I = 7A DS D |
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