IRF7307TRPBF datasheet(6/10 Pages) IRF

No. de pieza	IRF7307TRPBF

Descripción Electrónicos	HEXFET짰 Power MOSFET

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Fabricante Electrónico	IRF [International Rectifier]

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IRF7307PbF

25

50

75

100

125

150

0.0

1.0

2.0

3.0

4.0

5.0

T , Case Temperature

( C)

°

C

1

10

100

1

10

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

A

-V

, Drain-to-Source Voltage (V)

DS

1ms

10ms

Fig 18. Typical Source-Drain Diode

Forward Voltage

Fig 19. Maximum Safe Operating Area

Fig 22a. Gate Charge Test Circuit

Fig 20. Maximum Drain Current Vs.

Ambient Temperature

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T.

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

Fig 21b. Switching Time Waveforms

Fig 21a. Switching Time Test Circuit

QG

QGS

QGD

VG

Charge

Fig 22b. Basic Gate Charge Waveform

RG

VGS

VDS

RD

VDD

-4.5V

D.U.T.

VDS

ID

IG

-3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

-4.5V

0.1

1

10

100

0.3

0.6

0.9

1.2

1.5

T = 25°C

T = 150°C

J

V

= 0V

GS

SD

A

-V

, Source-to-Drain Voltage (V)

P-Channel

Número de pieza similar - IRF7307TRPBF

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Guangdong Youtai Semico...	IRF7307TR	491Kb / 9P	Generation V Technology Ultra

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IRF7307TRPBF Datasheet(PDF) 6 Page - International Rectifier

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Número de pieza similar - IRF7307TRPBF

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