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TDA1517ATW Datasheet(PDF) 7 Page - NXP Semiconductors |
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TDA1517ATW Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 19 page 2001 Apr 17 7 NXP Semiconductors Product specification 8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW Notes to the characteristics 1. RL =4 Ω, measured in Fig.4. 2. Output power is measured directly at the output pins of the IC. 3. Frequency response externally fixed. 4. Vripple =Vripple(max) = 2 V (p-p); RS =0 Ω. 5. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz. 6. Noise output voltage independent of RS. 7. Vi =Vi(max) = 1 V (RMS). 8. RL =8 Ω, measured in Fig.3. APPLICATION INFORMATION handbook, full pagewidth MGU304 15 410 11 16 8 +OUT −OUT PGND SGND 9 100 nF 1000 μF RL 8 Ω VCC TDA1517ATW 15 k Ω 10 k Ω 8.2 k Ω 15 k Ω 12 13 +IN1 3 18 17 MODE 5 470 nF A Ri 60 k Ω B VCC VCC STANDBY/ MUTE LOGIC MICRO- CONTROLLER μc1 μc2 μc1 0 0 1 On Mute Standby μc2 0 1 0 SHORT CIRCUIT AND TEMPERATURE PROTECTION input reference voltage Ri 60 k Ω Fig.3 BTL application block diagram. |
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