STD155N3LH6 datasheet(6/18 Pages) STMICROELECTRONICS

No. de pieza	STD155N3LH6

Descripción Electrónicos	N-channel 30 V, 2.4 m廓 , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB155N3LH6, STD155N3LH6

6/18

Doc ID 17893 Rev 3

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area

Figure 3.

Thermal impedance

Figure 4.

Output characteristics

Figure 5.

Transfer characteristics

Figure 6.

Normalized BVDSS vs temperature

Figure 7.

Static drain-source on resistance

ID

100

10

1

0.1

1

VDS(V)

10

(A)

Oper

ation

in

thi

s

are

a i

s

Limited

by

m

ax

R

D

S

(on)

100µs

1ms

10ms

Tj=175°C

Tc=25°C

Single pulse

AM09101v1

ID

150

100

50

0

1.0

VDS(V)

(A)

0.5

1.5

200

250

5V

4V

3V

VGS=10V

300

AM09102v1

ID

150

100

50

0

2

VGS(V)

4

(A)

1

3

200

VDS=1V

AM09103v1

BVDSS

-75

TJ(°C)

(norm)

-25

75

25

125

0.80

0.85

0.90

0.95

1.00

1.05

ID=1mA

1.10

AM09104v1

RDS(on)

1.5

1.0

0.5

0

40

ID(A)

(m

Ω)

20

60

2.0

2.5

3.0

3.5

VGS=10V

80

AM09105v1

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STD155N3LH6 Datasheet(PDF) 6 Page - STMicroelectronics

STD155N3LH6 Datasheet(HTML) 6 Page - STMicroelectronics

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