STD4N62K3 datasheet(3/18 Pages) STMICROELECTRONICS

No. de pieza	STD4N62K3

Descripción Electrónicos	N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB4N62K3, STD4N62K3

Electrical ratings

Doc ID 18337 Rev 2

3/18

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK

DPAK

VDS

Drain-source voltage

620

V

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

3.8

A

ID

Drain current (continuous) at TC = 100 °C

2

A

IDM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

15.2

A

PTOT

Total dissipation at TC = 25 °C

70

W

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

3.8

A

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

115

mJ

VESD(G-S)

Gate source ESD(HBM-C = 100 pF,

R = 1.5 k

Ω)

2500

V

dv/dt (2)

2.

ISD ≤ 3.8 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.

Peak diode recovery voltage slope

12

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

D²PAK

Rthj-case Thermal resistance junction-case max

1.79

°C/W

Rthj-pcb

(1)

1.

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-pcb max

50

30

°C/W

Número de pieza similar - STD4N62K3

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Descripción similar - STD4N62K3

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