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BF1202R Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BF1202R
Descripción Electrónicos  N-channel dual-gate PoLo MOS-FETs
Download  15 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

BF1202R Datasheet(HTML) 4 Page - NXP Semiconductors

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2010 Sep 16
4
NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
STATIC CHARACTERISTICS
Tj =25 C unless otherwise specified.
Note
1. RG1 connects G1 to VGG =5V.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 C; VG2-S =4V; VDS =5V; ID = 12 mA; unless otherwise specified.
Note
1. Measured in Fig.21 test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S =0; ID =10 A10
V
V(BR)G1-SS gate 1-source breakdown voltage
VG2-S =VDS =0; IG1-S =10mA
6
V
V(BR)G2-SS gate 2-source breakdown voltage
VG1-S =VDS =0; IG2-S =10mA
6
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS =0; IS-G1 =10mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS =0; IS-G2 =10mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S =4V; VDS =5V; ID =100 A0.3
1.0
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S =5V; VDS =5V; ID =100 A0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5V; RG1 =120 k;
note 1
816
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS =0; VG1-S =5V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS =0; VG2-S =4V
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 C
25
3040mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
1.7
2.2
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
1
pF
Coss
output capacitance
f = 1 MHz
0.85
pF
Crss
reverse transfer capacitance f = 1 MHz
15
30
fF
F
noise figure
f = 10.7 MHz; GS =20mS; BS =0
911
dB
f= 400MHz; YS =YSopt
0.9
1.5
dB
f= 800MHz; YS =YSopt
1.1
1.8
dB
Gtr
power gain
f = 200 MHz; GS =2mS; BS =BSopt;
GL = 0.5 mS; BL =BLopt
34.5
dB
f= 400MHz; GS =2mS; BS =BSopt;
GL =1mS; BL =BLopt
30.5
dB
f= 800MHz; GS = 3.3 mS; BS =BSopt;
GL =1mS; BL =BLopt
26.5
dB
Xmod
cross-modulation
input level for k = 1%; fw =50MHz;
funw =60MHz; note1
at 0 dB AGC
90

dB
V
at 10 dB AGC
92
dB
V
at 40 dB AGC
100
105
dB
V


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