BUJ403A127 datasheet(4/9 Pages) NXP

No. de pieza	BUJ403A127

Descripción Electrónicos	Silicon Diffused Power Transistor

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Fabricante Electrónico	NXP [NXP Semiconductors]

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4 / 9 page

NXP Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ403A

Fig.1. Test circuit for V

CEOsust.

Fig.2. Oscilloscope display for V

CEOsust.

Fig.3. Test circuit resistive load. V

IM = -6 to +8 V

V

CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

R

B and RL calculated from ICon and IBon requirements.

Fig.4. Switching times waveforms with resistive load.

Fig.5. Test circuit inductive load.

V

CC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

Fig.6. Switching times waveforms with inductive load.

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

1R

6V

30-60 Hz

300R

IC

IB

10 %

90 %

ton

toff

ts

tf

IBon

-IBoff

ICon

tr

30ns

VCE / V

min

VCEOsust

IC / mA

100

200

250

0

LB

IBon

-VBB

LC

T.U.T.

VCC

tp

T

VCC

R

T.U.T.

0

VIM

B

L

IC

IB

ICon

IBon

-IBoff

t

ts

tf

toff

10 %

90 %

December 1998

3

Rev 1.200

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BUJ403A127 Datasheet(PDF) 4 Page - NXP Semiconductors

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