MRF421 datasheet(3/4 Pages) MOTOROLA | RF POWER TRANSISTORS NPN SILICON

3 page

MRF421

MOTOROLA RF DEVICE DATA

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Supply Voltage

Figure 4. Power Gain versus Frequency

Figure 5. Intermodulation Distortion

versus Output Power

Figure 6. DC Safe Operating Area

Figure 7. Series Equivalent Impedance

160

Pin, INPUT POWER (WATTS PEP)

VCC = 12.5 V

ICQ = 150 mA

TWO TONE TEST:

f = 30, 30.001 MHz

120

VCC, SUPPLY VOLTAGE (VOLTS)

IMD = – 30 dB

ICQ = 150 mA

f = 30, 30.001 MHz

160

120

1.5

f, FREQUENCY (MHz)

–20

Pout, OUTPUT POWER (WATTS PEP)

–25

–30

–35

–40

–45

VCC = 12.5 V

ICQ = 150 mA

Pout = 100 W PEP

VCC = 12.5 V

ICQ = 150 mA

f = 30, 30.001 MHz

3RD ORDER

5TH ORDER

100

120

140

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100

TC = 25°C

0.4

0.8

Zin

7.5

f = 2 MHz

VCC = 12.5 V

ICQ = 150 mA

Pout = 100 W PEP

FREQUENCY

MHz

Zin

Ohms

2.0

7.5

5.35 – j2.2

2.8 – j1.9

1.39 – j1.1

0.7 – j0.5

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