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HUFA75645P3 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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HUFA75645P3 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA75645P3, HUFA75645S3S Rev. B HUFA75645P3, HUFA75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging Symbol Features • Ultra Low On-Resistance -rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and Saber Thermal Impedance Models - www.fairchild.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. JEDEC TO-220AB JEDEC TO-263AB DRAIN (FLANGE) DRAIN SOURCE GATE HUFA75645P3 GATE SOURCE DRAIN (FLANGE) HUFA75645S3S D G S PART NUMBER PACKAGE BRAND HUFA75645P3 TO-220AB 75645P HUFA75645S3S TO-263AB 75645S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75645S3ST. HUFA75645P3, HUFA75645S3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (TC = 25 oC, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100 oC, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 75 65 Figure 4 A A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310 2.07 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC NOTES: 1. TJ = 25 oC to 150oC. CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Data Sheet December 2001 |
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