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IRLML5203TRPBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRLML5203TRPBF
Descripción Electrónicos  HEXFETPower MOSFET
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRLML5203TRPBF Datasheet(HTML) 2 Page - International Rectifier

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IRLML5203PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -1.3A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
17
26
ns
TJ = 25°C, IF = -1.3A
Qrr
Reverse Recovery Charge
–––
12
18
nC
di/dt = -100A/µs
‚
Source-Drain Ratings and Characteristics
A
-24
–––
–––
–––
-1.3
–––
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.019 –––
V/°C Reference to 25°C, ID = -1mA
–––
–––
98
VGS = -10V, ID = -3.0A
‚
–––
–––
165
VGS = -4.5V, ID = -2.6A
‚
VGS(th)
Gate Threshold Voltage
-1.0 ––– -2.5
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
3.1
––– –––
S
VDS = -10V, ID = -3.0A
–––
––– -1.0
VDS = -24V, VGS = 0V
–––
––– -5.0
VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
––– 100
VGS = 20V
Qg
Total Gate Charge
–––
9.5
14
ID = -3.0A
Qgs
Gate-to-Source Charge
–––
2.3
3.5
nC
VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.6
2.4
VGS = -10V
‚
td(on)
Turn-On Delay Time
–––
12
–––
VDD = -15V
‚
tr
Rise Time
–––
18
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
88
–––
RG = 6.0Ω
tf
Fall Time
–––
52
–––
VGS = -10V
Ciss
Input Capacitance
–––
510 –––
VGS = 0V
Coss
Output Capacitance
–––
71
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
43
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns


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