STP11N52K3 datasheet(1/20 Pages) STMICROELECTRONICS

No. de pieza	STP11N52K3

Descripción Electrónicos	N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

March 2012

Doc ID 018868 Rev 2

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STB11N52K3, STF11N52K3

STP11N52K3

N-channel 525 V, 0.41

Ω, 10 A SuperMESH3™ Power MOSFET

in D²PAK,TO-220FP and TO-220 packages

Datasheet — production data

Features

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

■ Zener-protected

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs

made using the SuperMESH3™ technology that

is obtained via improvements applied to

STMicroelectronics’ SuperMESH™ technology

combined with a new optimized vertical structure.

The resulting transistor has an extremely low on

resistance, superior dynamic performance and

high avalanche capability, making it especially

suitable for the most demanding applications.

Figure 1.

Internal schematic diagram

Order codes

VDSS

RDS(on)

max.

ID

Pw

STB11N52K3

525 V

< 0.51

Ω

10 A

125 W

STF11N52K3

30 W

STP11N52K3

125 W

TO-220

TO-220FP

1

2

3

D²PAK

1

2

3

TAB

1

3

TAB

D(2,TAB)

G(1)

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Packages

Packaging

STB11N52K3

STF11N52K3

STP11N52K3

11N52K3

D²PAK

TO-220FP

TO-220

Tape and reel

Tube

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