HUFA76629D3S datasheet(4/10 Pages) FAIRCHILD

No. de pieza	HUFA76629D3S

Descripción Electrónicos	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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HUFA76629D3, HUFA76629D3S Rev. B

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. SATURATION CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves (Continued)

10

100

10

300

1

100

µs

10ms

1ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25

oC

TJ = MAX RATED

SINGLE PULSE

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

100

10

100

0.001

0.01

0.1

1

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25

oC

STARTING TJ = 150

oC

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R

≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

50

0

10

20

30

40

1.522.5

33.5

4.5

VGS, GATE TO SOURCE VOLTAGE (V)

TJ= 25

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

TJ= 175

oC

TJ= -55

oC

4

50

0

10

20

30

40

012

3

4

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 3V

VGS = 3.5V

VGS = 5V

VGS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

TC = 25

oC

VGS = 4V

ID = 10A

30

40

50

60

2

468

10

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 20A

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

TC = 25

oC

0.5

1.0

1.5

2.0

3.0

-80

-40

0

40

80

120

200

TJ, JUNCTION TEMPERATURE (

oC)

VGS = 10V, ID = 20A

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

160

2.5

HUFA76629D3, HUFA76629D3S

Número de pieza similar - HUFA76629D3S

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Fairchild Semiconductor	HUFA76609D3	209Kb / 10P	10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
VBsemi Electronics Co.,...	HUFA76609D3	1Mb / 7P	N-Channel 100 V (D-S) MOSFET
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Descripción similar - HUFA76629D3S

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	HUF76629D3	203Kb / 10P	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76629D3	334Kb / 9P	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76419D3	197Kb / 10P	20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76413D3	205Kb / 10P	20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76419D3	332Kb / 9P	20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76429D3	200Kb / 10P	20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76413D3	105Kb / 9P	20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUF76423D3	127Kb / 9P	20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUF76429D3	332Kb / 9P	20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76633P3	218Kb / 10P	38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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HUFA76629D3S Datasheet(PDF) 4 Page - Fairchild Semiconductor

HUFA76629D3S Datasheet(HTML) 4 Page - Fairchild Semiconductor

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