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1N4735A Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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1N4735A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page Device VZ (V) ZZ ( Ω) IZT (mA) ZZK ( Ω) IZK (mA) VR (V) IR ( µA) ISURGE (mA) IZM (mA) 1N4728A 1N4729A 1N4730A 1N4731A 3.3 3.6 3.9 4.3 10 10 9.0 9.0 76 69 64 58 400 400 400 400 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 100 100 50 10 1,380 1,260 1,190 1,070 276 252 234 217 1N4732A 1N4733A 1N4734A 1N4735A 4.7 5.1 5.6 6.2 8.0 7.0 5.0 2.0 53 49 45 41 500 550 600 700 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 10 10 10 10 970 890 810 730 193 178 162 146 1N4736A 1N4737A 1N4738A 1N4739A 6.8 7.5 8.2 9.1 3.5 4.0 4.5 5.0 37 34 31 28 700 700 700 700 1.0 0.5 0.5 0.5 4.0 5.0 6.0 7.0 10 10 10 10 660 605 550 500 133 121 110 100 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 10 11 12 13 15 7.0 8.0 9.0 10 14 25 23 21 19 17 700 700 700 700 700 0.25 0.25 0.25 0.25 0.25 7.6 8.4 9.1 9.9 11.4 10 5.0 5.0 5.0 5.0 454 414 380 344 304 91 83 76 69 61 1N4745A 1N4746A 1N4747A 1N4748A 16 18 20 22 16 20 22 23 15.5 14 12.5 11.5 700 750 750 750 0.25 0.25 0.25 0.25 12.2 13.7 15.2 16.7 5.0 5.0 5.0 5.0 285 250 225 205 57 50 45 41 1N4749A 1N4750A 1N4751A 1N4752A 24 27 30 33 25 35 40 45 10.5 9.5 8.5 7.5 750 750 1,000 1,000 0.25 0.25 0.25 0.25 18.2 20.6 22.8 25.1 5.0 5.0 5.0 5.0 190 170 150 135 38 34 30 27 VF Foward Voltage = 1.2 V Maximum @ IF = 200 mA for all 1N4700 series 1N4728A - 1N4752A Series One Watt Zeners Absolute Maximum Ratings* TA = 25°C unless otherwise noted Tolerance: A = 5% Electrical Characteristics TA = 25°C unless otherwise noted @ @ @ NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C. Pa r a m e te r V a lue U n its S torage T e m p e rature R ange -65 to + 200 °C M a x im u m Junc tion O perating T e m perature + 200 °C Lead T e m perat ure (1 /16” from case fo r 10 sec onds) + 230 °C T o ta l D e v ice D issipatio n D e ra te abov e 5 0 °C 1.0 6.67 W mW / °C T herm a l re sista n ce Junction to Lead 53.5 °C/W T herm a l re sista n ce Junction to A m bient 100 °C/W Su rg e Po w e r* * 1 0 W DO-41 ©1997 Fairchild Semiconductor Corporation 1N4700A Rev. B |
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Descripción similar - 1N4735A |
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