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IRF6811SPBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF6811SPBF
Descripción Electrónicos  RoHS Compliant and Halogen Free
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6811SPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF6811SPbF
2
www.irf.com
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
22
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.8
3.7
–––
4.1
5.4
VGS(th)
Gate Threshold Voltage
1.1
1.6
2.1
V
VDS = VGS, ID = 35µA
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.2
––– mV/°C VDS = VGS, ID = 25µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
180
–––
–––
S
Qg
Total Gate Charge
–––
11
17
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.2
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.4
–––
Qgd
Gate-to-Drain Charge
–––
4.2
–––
Qgodr
Gate Charge Overdrive
–––
3.2
–––
See Fig. 2 & 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
5.6
–––
Qoss
Output Charge
–––
11
–––
nC
RG
Gate Resistance
–––
0.4
–––
td(on)
Turn-On Delay Time
–––
8.7
–––
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
11
–––
tf
Fall Time
–––
5.5
–––
Ciss
Input Capacitance
–––
1590
–––
Coss
Output Capacitance
–––
460
–––
pF
Crss
Reverse Transfer Capacitance
–––
110
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ãg
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
18
27
ns
Qrr
Reverse Recovery Charge
–––
23
35
nC
A
ns
–––
–––
–––
–––
40
150
m
nC
VGS = 4.5V, ID = 15A i
VGS = 4.5V
ID = 15A
VGS = 16V
VGS = -16V
VDS = 20V, VGS = 0V
VDS = 13V
VDS = 13V
ID = 15A
VDD = 13V, VGS = 4.5VÃi
di/dt = 300A/µs
i
TJ = 25°C, IS = 15A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IF = 15A
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 19A i
VDS = 20V, VGS = 0V, TJ = 125°C
MOSFET symbol
RG = 1.5Ω
VDS = 13V, ID = 15A
Conditions
See Fig. 17
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VGS = 0V


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