IRF9389TRPBF datasheet(1/14 Pages) IRF

No. de pieza	IRF9389TRPBF

Descripción Electrónicos	High and Low Side Switches for Inverter

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Fabricante Electrónico	IRF [International Rectifier]

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HEXFET® Power MOSFET

Applications

l

High and Low Side Switches for Inverter

l

High and Low Side Switches for Generic Half-Bridge

D1

N-CHANNEL MOSFET

P-CHANNEL MOSFET

D1

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

SO-8

N-CH P-CH

VDS

30

-30

V

RDS(on) max

27

64

m



Qg (typical)

6.8

8.1

nC

ID

(@TA = 25°C)

6.8

-4.6

A

Absolute Maximum Ratings

Parameter

Units

N-Channel

P-Channel

VGS

Gate-to-Source Voltage

±20

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

6.8

-4.6

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

5.4

-3.7

IDM

Pulsed Drain Current

c

34

-23

PD @TA = 25°C

Power Dissipation

PD @TA = 70°C

Power Dissipation

Linear Derating Factor

W/°C

TJ

Operating Junction and

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max

Units

RJL

Junction-to-Drain Lead

f

–––

20

RJA

Junction-to-Ambient

e

–––

62.5

-55 to + 150

1.3

2.0

°C/W

Max.

V

A

W

°C

0.016

Form

Quantity

Tube/Bulk

95

IRF9389PbF

Tape and Reel

4000

IRF9389TRPbF

Base Part Number

Package Type

Standard Pack

Orderable part number

IRF9389PbF

SO-8

Features

Benefits

High and low-side MOSFETs in a single package

Increased power density

High-side P-Channel MOSFET

Easier drive circuitry

Industry-standard pinout

results in Multi-vendor compatibility

Compatible with existing surface mount techniques



Easier manufacturing

RoHS compliant containing no Lead, no Bromide and no Halogen

Environmentally friendlier

MSL1, Consumer qualification

Increased reliability

IRF9389PbF

1

January 14, 2013

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