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SB27S Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SB27S
Descripción Electrónicos  Voltage 20V ~100V 2.0Amp Schottky Barrier Bridge Rectifers
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SB27S Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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SB22S ~ SB210S
Voltage 20V ~ 100V
2.0 Amp Schottky Barrier Bridge Rectifiers
Elektronische Bauelemente
22-Mar -2012 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Metal-Semiconductor junction with guarding
Epitaxial construction
Very low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
Application
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection.
MECHANICAL DATA
Case: Molded Plastic
Polarity: Indicated by cathode band
Weight: 0.0044 ounces, 0.125 grams
PACKAGE INFORMATION
Package
MPQ
Leader Size
MDS
3K
13 inch
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Part Number
Unit
SB
22S
SB
23S
SB
24S
SB
25S
SB
26S
SB
27S
SB
28S
SB
210S
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
90
100
V
Maximum RMS Bridge Input Voltage
VRMS
14
21
28
35
42
56
63
70
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
90
100
V
Maximum Average Forward Rectified Current
@TL=100°C
I(AV)
2
A
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Super Imposed on Rated Load
(JEDEC Method)
IFSM
50
A
Maximum Forward Voltage @ 1A DC
VF
0.55
0.7
0.85
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TJ=25°C
IR
1
mA
TJ=100°C
20
Typical Junction Capacitance
1
CJ
125
pF
Typical Thermal Resistance
2
RθJL
20
°C / W
Operating and Storage temperature range
TJ,TSTG
-55~125, -55~150
°C
Note:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to lead.
MDS
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
-
7.0
G
1.3
1.7
B
3.6
4.2
H
0.7
1.1
C
0.5
0.8
I
0.1
0.35
D
2.3
2.7
J
0.2(TYP.)
E
4.5
4.9
K
0.5*15°
F
2.3
2.7


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