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KA1M0965RYDTU Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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KA1M0965RYDTU Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page KA1M0965R 3 Electrical Characteristics (SFET part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 2. Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=4.5A - 0.96 1.2 Ω Forward Transconductance (Note) gfs VDS=15V, ID=4.5A 5.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1750 - pF Output Capacitance Coss - 190 - Reverse Transfer Capacitance Crss - 78 - Turn on Delay Time td(on) VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) -20 50 nS Rise Time tr - 23 55 Turn Off Delay Time td(off) - 85 180 Fall Time tf - 30 70 Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=9.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) -74 75 nC Gate-Source Charge Qgs - 12 - Gate-Drain (Miller) Charge Qgd - 35.4 - S 1 R ---- = |
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