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KA5Q1565 Datasheet(PDF) 4 Page - Fairchild Semiconductor

No. de pieza KA5Q1565
Descripción Electrónicos  Fairchild Power Switch(FPS)
Download  16 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KA5Q1565 Datasheet(HTML) 4 Page - Fairchild Semiconductor

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KA5Q-SERIES
4
Electrical Characteristics (SFET part)
(Ta=25
°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
KA5Q0765RT
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max., Rating, VGS=0V
-
-
200
µA
VDS=0.8Max., Rating,
VGS=0V, TC=85
°C
-
-
300
µA
Static Drain-Source on Resistance(1)
RDS(on)
VGS=10V, ID=4.0A
-
1.3
1.6
Input Capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-1110
-
pF
Output Capacitance
Coss
-
105
-
Reverse Transfer Capacitance
Crss
-
50
-
Turn on Delay Time
td(on)
VDD=0.5BVDSS, ID=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-25
-
nS
Rise Time
tr
-
55
-
Turn Off Delay Time
td(off)
-
80
-
Fall Time
tf
-
50
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=7.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
-57
74
nC
Gate-Source Charge
Qgs
-
9.3
-
Gate-Drain (Miller) Charge
Qgd
-
29.3
-
KA5Q12656RT/KA5Q1265RF
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max., Rating, VGS=0V
-
-
200
µA
VDS=0.8Max., Rating,
VGS=0V, TC=85
°C
-
-
300
µA
Static Drain-Source on Resistance (1)
RDS(on)
VGS=10V, ID=6A
-
0.7
0.9
Input Capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-
1820
-
pF
Output Capacitance
Coss
-
185
-
Reverse Transfer Capacitance
Crss
-
32
-
Turn on Delay Time
td(on)
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-38
-
nS
Rise Time
tr
-
120
-
Turn Off Delay Time
td(off)
-
200
-
Fall Time
tf
-
100
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
-60
78
nC
Gate-Source Charge
Qgs
-
10
-
Gate-Drain (Miller) Charge
Qgd
-
30
-


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