BDX62 – A – B – C

24/10/2012

COMSET SEMICONDUCTORS

1 | 4

P

P SILICON DARLINGTON POWER TRANSISTOR

The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package.

High current power darlingtons designed for power amplification and switching applications.

The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

BDX62

-60

V

BDX62A

-80

BDX62B

-100

BDX62C

-120

Collector-EmitterVoltage

BDX62

-60

V

BDX62A

-80

BDX62B

-100

BDX62C

-120

Emitter-Base Voltage

-5.0

V

Collector Current

-8

A

-12

Base Current

-0.15

A

Power Dissipation

90

W

Junction Temperature

-55 to +200

°C

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.94

°C/W