BDX66B datasheet(2/4 Pages) COMSET

No. de pieza	BDX66B

Descripción Electrónicos	PNP SILICON DARLINGTON POWER TRANSISTOR

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Fabricante Electrónico	COMSET [Comset Semiconductor]

Página de inicio	http://comset.halfin.com

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2 / 4 page

BDX66 – A – B – C

24/10/2012

COMSET SEMICONDUCTORS

2/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

-VCEO(SUS)

Collector-Emitter Breakdown

Voltage (*)

-IC=0.1 A

L=25mH

BDX66

60

-

V

BDX66A

80

-

BDX66B

100

-

BDX66C

120

-

-ICEO

Collector Cutoff Current

-VCE=30 V

BDX66

-

3

mA

-VCE=40 V

BDX66A

-

-VCE=50 V

BDX66B

-

-VCE=60 V

BDX66C

-

-IEBO

Emitter Cutoff Current

-VBE=5 V

BDX66

-

5.0

mA

BDX66A

BDX66B

BDX66C

-ICBO

Collector-Base Cutoff

Current

-VCB=60 V

BDX66

-

1

mA

-VCB=40 V

TCASE=200°C

-

5

-VCB=80 V

BDX66A

-

1

-VCB=50 V

TCASE=200°C

-

5

-VCB=100 V

BDX66B

-

1

-VCB=60 V

TCASE=200°C

-

5

-VCB=120 V

BDX66C

-

1

-VCB=70 V

TCASE=200°C

-

5

hFE

DC Current Gain

-VCE=3 V

- IC=1 A

BDX66

-

2000

-

BDX66A

BDX66B

BDX66C

-VCE=3 V

- IC=10 A

BDX66

1000

-

BDX66A

BDX66B

BDX66C

-VCE=3 V

- IC=16 A

BDX66

-

1000

-

BDX66A

BDX66B

BDX66C

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BDX66B Datasheet(PDF) 2 Page - Comset Semiconductor

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