MJ1000_12 datasheet(2/3 Pages) COMSET

No. de pieza	MJ1000

Descripción Electrónicos	COMPLEMENTARY POWER DARLINGTONS

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Fabricante Electrónico	COMSET [Comset Semiconductor]

Página de inicio	http://comset.halfin.com

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2 / 3 page

NPN MJ1000 – MJ1001

29/10/2012

COMSET SEMICONDUCTORS

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ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC=100 mA, IB=0

MJ1000

60

-

V

MJ1001

80

-

ICEO

Collector Cutoff Current

VCE=30 V, IB=0

MJ1000

-

500

µA

VCE=40 V, IB=0

MJ1001

-

IEBO

Emitter Cutoff Current

VBE=5.0 V, IC=0

MJ1000

-

2.0

mA

MJ1001

ICER

Collector-Emitter Leakage

Current

VCB=60 V,

RBE=1.0 kΩ

MJ1000

-

1.0

mA

VCB=80 V

RBE=1.0 kΩ

MJ1001

-

VCB=60 V

RBE=1.0 kΩ

TC=150°C

MJ1000

-

5.0

VCB=80 V

RBE=1.0 kΩ

TC=150°C

MJ1001

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=3.0 A, IB=2 mA

MJ1000

-

2.0

V

MJ1001

IC=8.0 A, IB=40 mA

MJ1000

-

4.0

MJ1001

VF

Forward Voltage (pulse

method)

IF=3 A

MJ1000

-

1.8

-

V

MJ1001

VBE

Base-Emitter Voltage (*)

IC=3.0 A, VCE=3.0 V

MJ1000

-

2.5

V

MJ1001

HFE

DC Current Gain (*)

VCE=3.0 V, IC=3.0 A

MJ1000

1000

-

MJ1001

VCE=3.0 V, IC=4.0 A

MJ1000

750

-

MJ1001

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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