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STP11NM65N Datasheet(PDF) 9 Page - STMicroelectronics

No. de pieza STP11NM65N
Descripción Electrónicos  N-channel 650 V, 0.425typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP11NM65N Datasheet(HTML) 9 Page - STMicroelectronics

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 9 / 21 page
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Doc ID 13476 Rev 4
9/21
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
Test circuits
21
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μF
VDD
AM01469v1
VDD
47k
Ω
1k
Ω
47k
Ω
2.7k
Ω
1k
Ω
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100
Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
RG
G
FAST
DIODE
D
S
L=100
μH
μF
3.3
1000
μF
VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS


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