BC489 datasheet(3/6 Pages) ONSEMI

No. de pieza	BC489

Descripción Electrónicos	High Current Transistors NPN Silicon These are Pb?묯ree Devices

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BC489, BC489A

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3

Figure 2. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

200

70

50

30

20

10

7.0

5.0

3.0

2.0

300

200

100

70

50

30

VCE = 2.0 V

TJ = 25°C

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100

50

20

10

5.0

2.0

1.0

0.5

0.2

0.1

80

60

40

20

10

4.0

TJ = 25°C

Cobo

Cibo

8.0

Figure 4. Switching Time

IC, COLLECTOR CURRENT (mA)

500

50

30

20

10

7.0

5.0

1.0 k

VCC = 40 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

700

500

300

200

100

70

50

30

20

10

ts

tf

tr

td @ VBE(off) = 0.5 V

100

6.0

200

100

70

300

Figure 5. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

5.0

10

20

50

100

200

500

1.0k

2.0k

5.0k

10k

20k

50k 100k

D = 0.5

0.2

0.1

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1 (SEE AN−469)

TJ(pk) − TC = P(pk) ZqJC(t)

TJ(pk) − TA = P(pk) ZqJA(t)

t1

t2

P(pk)

ZqJC(t) = r(t) • RqJC

ZqJA(t) = r(t) • RqJA

SINGLE PULSE

Número de pieza similar - BC489

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