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LM27403SQX Datasheet(PDF) 5 Page - Texas Instruments |
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LM27403SQX Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 49 page  LM27403 www.ti.com SNVS896 A – AUGUST 2013 – REVISED SEPTEMBER 2013 ELECTRICAL CHARACTERISTICS (continued) At TJ = –40°C to +125°C and VVIN = 12 V, all parameters at zero power dissipation (unless otherwise noted). Minimum and maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric normal specifications at TJ = 25°C and are provided for reference purposes only. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RDS(ON)3 ILG = 0.1 A (pullup) 1.5 Ω Low-side MOSFET driver on-state VDD = 4.5 V resistance RDS(ON)4 ILG = –0.1 A (pulldown) 0.9 Ω IDRV-LG-SRC Source current (pullup) 1.5 A Low-side MOSFET driver peak CLOAD = 3 nF current IDRV-LG-SINK Sink current (pulldown) 2.0 A TDEAD Adaptive dead-time 15 ns SOFT-START ISS Soft-start source current VSS/TRACK = 0 V 1.0 3.0 5.0 µA ISS-PD Soft-start pulldown resistance VSS/TRACK = 0.6 V 330 Ω TSS-INT Internal soft-start timeout 1.28 ms POWER GOOD IPGS PGOOD low sink current VPGOOD = 0.2 V, VFB = 0.75 V 70 100 µA IPGL PGOOD leakage current VPGOOD = 5 V 1 10 µA OVT Overvoltage threshold VFB rising, RS tied to GND 111% 116.5% 123% OVTHYS OVT hysteresis VFB falling, RS tied to GND 3.5% UVT Undervoltage threshold VFB rising, RS tied to GND 86% 91% 97% UVTHYS UVT hysteresis VFB falling, RS tied to GND 4% tdeglitch Deglitch time VPGOOD rising and falling 20 µs UVLO/ENABLE VUVLO1 Logic low threshold VUVLO/EN falling 0.94 0.985 1.03 V VUVLO2 Logic high threshold VUVLO/EN rising 1.11 1.15 1.18 V VUVLO-HYS UVLO/EN voltage hysteresis VUVLO/EN falling 139 165 190 mV IUVLO1 UVLO/EN pullup current, disabled VUVLO/EN = 0 V 0.8 1.8 2.7 µA IUVLO2 UVLO/EN pullup current, enabled VUVLO/EN = 1.25 V 5.5 10.5 15.5 µA CLOCK SYNCHRONIZATION VIH-SYNC SYNC pin VIH 2 V VIL-SYNC SYNC pin VIL 0.8 V SYNCFSW-L Minimum clock sync frequency 200 kHz SYNCFSW-H Maximum clock sync frequency 1.2 MHz SYNCI SYNC pin input current 1 µA EXTERNAL TEMPERATURE SENSE AND THERMAL SHUTDOWN ID+1 D+ pin state 1 current 10 µA ID+2 D+ pin state 2 current 100 µA IOTP Remote thermal current ΔVBE = 79.3 mV (3) 13.5 14.6 15.5 µA IOTP-TC IOTP temperature coefficient Referenced to ΔVBE (4) 158 187 213 nA/mV VTRIP Remote thermal trip point 1.15 V Remote thermal trip point VTRIP-HYS 80 mV hysteresis ROTP(nom) = 80.7 kΩ, ΔVBE = 79.3 mV (3), T J = ROTP OTP resistance, thermal shutdown –5% 5% 125°C TSHD Internal thermal shutdown threshold Rising 150 °C Internal thermal shutdown threshold TSHD-HYS 20 °C hysteresis (3) The specified parameter is calculated based on a 2N3904 transistor at 125°C. (4) Multiply by 19.9 to scale from nA/mV to ppm/°C (assumes 2N3904 BJT temperature sensor with ideality factor η =1.004). Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM27403 |
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