STP18N55M5 datasheet(8/22 Pages) STMICROELECTRONICS

No. de pieza	STP18N55M5

Descripción Electrónicos	N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5

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Doc ID 17078 Rev 2

Figure 14.

Normalized gate threshold voltage

vs temperature

Figure 15.

Normalized on resistance vs

temperature

Figure 16.

Switching losses vs gate resistance

(1)

Figure 17.

Normalized BVDSS vs temperature

1.

Eon including reverse recovery of a SiC diode

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

ID=250µA

AM08670v1

RDS(on)

1.3

0.7

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

ID=6.5A

VGS=10V

1.1

0.9

2.1

1.5

1.9

1.7

AM08671v1

E

60

40

20

0

20

RG(

Ω)

(

μJ)

10

30

80

100

120

40

ID=9A

VCL=400V

Eon

Eoff

VGS=10V

140

AM08673v1

BVDSS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.93

0.95

0.97

0.99

1.01

1.03

1.05

1.07

ID=1mA

AM08672v1

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