IRLHM620TR2PBF datasheet(3/8 Pages) IRF

No. de pieza	IRLHM620TR2PBF

Descripción Electrónicos	HEXFETPower MOSFET

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Fabricante Electrónico	IRF [International Rectifier]

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IRLHM620PbF

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3

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

VGS

TOP

10V

4.5V

3.5V

2.5V

2.0V

1.8V

1.5V

BOTTOM

1.3V

≤60µs PULSE WIDTH

Tj = 25°C

1.3V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

1.3V

≤60µs PULSE WIDTH

Tj = 150°C

VGS

TOP

10V

4.5V

3.5V

2.5V

2.0V

1.8V

1.5V

BOTTOM

1.3V

0.5

1.0

1.5

2.0

2.5

VGS, Gate-to-Source Voltage (V)

1.0

10

100

1000

TJ = 25°C

TJ = 150°C

VDS = 10V

≤60µs PULSE WIDTH

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

20406080

100

120

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= 16V

VDS= 10V

VDS= 4.0V

ID= 20A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

ID = 20A

VGS = 4.5V

Número de pieza similar - IRLHM620TR2PBF

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