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IRF3710ZL Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRF3710ZL Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 12 page  IRF3710Z/S/L 2 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 35A, VGS =10V. Part not recommended for use above this value. I SD ≤ 35A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. S D G S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 14 18 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 35 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 82 120 nC Qgs Gate-to-Source Charge ––– 19 28 Qgd Gate-to-Drain ("Miller") Charge ––– 27 40 td(on) Turn-On Delay Time ––– 17 ––– ns tr Rise Time ––– 77 ––– td(off) Turn-Off Delay Time ––– 41 ––– tf Fall Time ––– 56 ––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2900 ––– pF Coss Output Capacitance ––– 290 ––– Crss Reverse Transfer Capacitance ––– 150 ––– Coss Output Capacitance ––– 1130 ––– Coss Output Capacitance ––– 170 ––– Coss eff. Effective Output Capacitance ––– 280 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 59 (Body Diode) A ISM Pulsed Source Current ––– ––– 240 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 5075ns Qrr Reverse Recovery Charge ––– 100 160 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 35A f VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C RG = 6.8Ω ID = 35A VDS = 50V, ID = 35A VDD = 50V ID = 35A VGS = 20V VGS = -20V TJ = 25°C, IF = 35A, VDD = 25V di/dt = 100A/µs f TJ = 25°C, IS = 35A, VGS = 0V f showing the integral reverse p-n junction diode. MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 80V, ƒ = 1.0MHz Conditions VGS = 0V, VDS = 0V to 80V VDS = 80V VGS = 10V f ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 10V f www.kersemi.com |
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