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IRF7406TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7406TRPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7406PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.020 V/°C Reference to 25°C, ID = -1mA 0.045 VGS = -10V, ID = -2.8A 0.070 VGS = -4.5V, ID = -2.4A VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 3.1 S VDS = -15V, ID = -2.8A -1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage -100 VGS = -20V Gate-to-Source Reverse Leakage 100 VGS = 20V Qg Total Gate Charge 59 ID = -2.8A Qgs Gate-to-Source Charge 5.7 nC VDS = -2.4V Qgd Gate-to-Drain ("Miller") Charge 21 VGS = -10V, See Fig. 6 and 12 td(on) Turn-On Delay Time 16 VDD = -15V tr Rise Time 33 ID = -2.8A td(off) Turn-Off Delay Time 45 RG = 6.0Ω tf Fall Time 47 RD = 5.3Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance 1100 VGS = 0V Coss Output Capacitance 490 pF VDS = -25V Crss Reverse Transfer Capacitance 220 = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.0 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time 42 63 ns TJ = 25°C, IF = -2.8A Qrr Reverse Recovery Charge 64 96 nC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -2.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) -23 -3.1 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 4.0 LD Internal Drain Inductance 2.5 nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G S D G Surface mounted on FR-4 board, t ≤ 10sec. |
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