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| RFD14N05 |
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©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFD14N05, RFD14N05SM, RFP14N05 UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ± 20 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 14 Refer to Peak Current Curve A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 0.32 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 o C Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 o C o C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress on ly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1.T J = 25 o C to 150oC. Electrical Specifications TC = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 9) 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS , VGS = 0V - - 25 µA VDS = 0.8 x Rated BV DSS, VGS = 0V, T C = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 14A, VGS = 10V, (Figure 11) - - 0.100 Ω Turn-On Time tON VDD = 25V, ID ≈ 14A, VGS = 10V, RGS = 25Ω, RL = 1.7Ω (Figure 13) - - 60 ns Turn-On Delay Time td(ON) - 14 - ns Rise Time tr - 26 - ns Turn-Off Delay Time td(OFF) - 45 - ns Fall Time tf - 17 - ns Turn-Off Time tOFF - - 100 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 40V, ID = 14A, RL = 2.86Ω Ig(REF) = 0.4mA (Figure 13) - - 40 nC Gate Charge at 5V Qg(10) VGS = 0V to 10V - - 25 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 1.5 nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 570 - pF Output Capacitance COSS - 185 - pF Reverse Transfer Capacitance CRSS - 50 - pF Thermal Resistance Junction to Case RθJC - - 3.125 oC/W Thermal Resistance Junction to Ambient RθJA TO-251 and TO-252 - - 100 oC/W RθJA TO-220 - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 14A - - 1.5 V Diode Reverse Recovery Time trr ISD = 14A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFD14N05, RFD14N05SM, RFP14N05 |
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