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| RFP15N05L |
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 FAIRCHILD
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©2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFP15N05L RFP15N06L UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 60 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 15 40 15 40 A A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 ±10 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25 oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 0.48 60 0.48 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V RFP15N05L 50 - - V RFP15N06L 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 7) 1 - 2 V Zero Gate Voltage Drain Current IDSS VDS = 48V, VDS = 50V - - 1 µA VDS = 48V, VDS = 50V TC = 125oC- - 50 µA Gate to Source Leakage Current IGSS VGS = ±10V, VDS = 0V - - 100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 15A, VGS = 5V (Figures 5, 6) - - 0.140 Ω Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 8) - - 900 pF Output Capacitance COSS - - 450 pF Reverse-Transfer Capacitance CRSS - - 200 pF Turn-On Delay Time td(ON) VDD = 30V, ID = 7.5A, RG = 6.25Ω (Figures 10, 11) -16 40 ns Rise Time tr - 250 325 ns Turn-Off Delay Time td(OFF) - 200 325 ns Fall Time tf VGS = 5V - 225 325 ns RθJC RFP15N05L, RFP15N06L - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 7.5A - - 1.4 V Diode Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/µs - 225 - ns NOTE: 2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%. 3. Repititive rating: pulse width limited by maximum junction temperature. RFP15N05L, RFP15N06L |
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