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BC856BW Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BC856BW
Descripción Electrónicos  PNP general purpose transistors
Download  10 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

BC856BW Datasheet(HTML) 4 Page - NXP Semiconductors

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2002 Feb 04
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −30 V; IE = 0
−1
−15
nA
VCB = −30 V; IE = 0;
Tj = 150 °C
−4
μA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−100
nA
hFE
DC current gain
IC = −2 mA; VCE = −5 V
BC856W
125
475
BC857W; BC858W
125
800
BC856AW; BC857AW
125
250
BC856BW; BC857BW
220
475
BC857CW
420
800
VCEsat
collector-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA −
−75
−300
mV
IC = −100 mA; IB = −5 mA;
note 1
−250
−600
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA −
−700
mV
IC = −100 mA; IB = −5 mA;
note 1
−850
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
−600
−650
−750
mV
IC = −10 mA; VCE = −5 V
−820
mV
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
3
pF
Ce
emitter capacitance
VEB = −0.5 V; IC = Ic = 0;
f = 1 MHz
12
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
MHz
F
noise figure
IC = −200 μA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
10
dB


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