 |
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
|
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
SI4466DY Datasheet(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
SI4466DY Datasheet(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 5 page  Si4466DY Rev. A Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 50 ° C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105 ° C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 125 ° C/W when mounted on a 0.003 in2 pad of 2 oz. copper. Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 29 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.9 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -4 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 4.5 V, ID =15 A VGS = 4.5 V, ID =15 A, TJ=125 °C VGS = 2.5 V, ID =12 A 0.006 0.009 0.008 0.0075 0.0130 0.0100 Ω ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5.0 V 25 A gFS Forward Transconductance VDS = 5 V, ID = 15 A 70 S Dynamic Characteristics Ciss Input Capacitance 4700 pF Coss Output Capacitance 850 pF Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz 310 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 20 32 ns tr Turn-On Rise Time 27 44 ns td(off) Turn-Off Delay Time 95 133 ns tf Turn-Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 35 56 ns Qg Total Gate Charge 47 66 nC Qgs Gate-Source Charge 7 nC Qgd Gate-Drain Charge VDS = 10 V, ID = 15 A, VGS = 5 V, 10.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.65 1.2 V IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA |
Número de pieza similar - SI4466DY |
|
Descripción similar - SI4466DY |
|
|
|
Enlace URL |
| Política de Privacidad |
| ALLDATASHEET.ES |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Spanish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
