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4N38M Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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4N38M Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 September 2009 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features ■ High voltage: – MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V ■ High isolation voltage: – 7500 VAC peak, 1 second ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2 ■ IEC 60747-5-2 approved (ordering option V) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls General Description The 4N38M, H11DXM and MOC8204M are photo- transistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is sup- plied in a standard plastic six-pin dual-in-line package. Schematic Package Outlines EMITTER COLLECTOR 1 2 3 ANODE CATHODE 4 5 6 BASE N/C |
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Descripción similar - 4N38M |
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