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SI6435DQ Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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SI6435DQ Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page Si6435DQ Rev B(W) Typical Characteristics 0 5 10 15 20 25 30 01 23 45 -VDS, DRAIN TO SOURCE VOLTAGE (V) V GS = -10V -3.5V -4.0V -4.5V -3.0V -6.0V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 5 10 15 20 25 30 -ID, DRAIN CURRENT (A) V GS = -4.0V -5.0V -4.5V -6.0V -7.0V -8.0V -10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) I D = -4.5A V GS = -10V 0.02 0.04 0.06 0.08 0.1 0.12 2468 10 -VGS, GATE TO SOURCE VOLTAGE (V) I D = -2.3A T A = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 4 8 12 16 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS= - 5V 0.0001 0.001 0.01 0.1 1 10 00.2 0.4 0.6 0.811.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) V GS = 0V T A = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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